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  Datasheet File OCR Text:
 SMD Type
Transistors
NPN Epitaxial Planar Silicon Transistor 2SD1623
Features
Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed. The ultraminiature package facilitates higher-density mounting, thus allows the applied hybrid IC' further miniaturization. s
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Junction temperature Storage temperature * Mounted on ceramic board(250mm2X0.8mm) Symbol VCBO VCEO VEBO IC ICP PC PC * Tj Tstg Rating 60 50 6 2 4 0.5 1.3 150 -55 to +150 Unit V V V A A W W
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1
SMD Type
2SD1623
Electrical Characteristics Ta = 25
Parameter Collector cutoff current Emitter cutoff current DC current gain Gain bandwidth product Output capacitance Collector-emitter saturation voltage Base-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Turn-on timie Symbol ICBO IEBO hFE fT Cob Testconditons VCB = 50 V, IE=0 VEB = 4 V, IC=0 VCE = 2 V , IC = 100 mA VCE = 10 V , IC = 50 mA VCB = 10 V , f = 1.0MHz 100 150 12 0.15 0.9 60 50 6 60 Min Typ
Transistors
Max 100 100 560
Unit nA nA
MHz pF 0.4 1.2 V V V V V ns
VCE(sat) IC = 1 A , IB = 50 mA VBE(sat) IC = 1 A , IB = 50 mA V(BR)CBO IC = 10iA , IE = 0 V(BR)CEO IC = 1mA , RBE = V(BR)EBO IE = 10iA , IC = 0 ton
Storage time
tstg
550
ns
Turn-off time
tf
30
ns
hFE Classification
Marking Rank hFE R 100 200 S 140 280 DF T 200 400 U 280 560
2
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